Oxide-Free Silicon to Silicon Carbide Heterobond
2008 (English)In: ESC Transactions, ISSN 1938-6737, Vol. 16, no 8, 377-383 p.Article in journal (Refereed) Published
Thin crystalline device layersof Si were bonded to Si-faced SiC wafers, with eithera chemical or a thermal oxide interface layer. The interfacethermal oxide was successfully removed by oxygen out-diffusion for 2.5h in an Ar atmosphere at 1250 oC. XTEM micrographsshowed that an abrupt transition between Si and SiC withcomplete removal of the interlayer oxide had been obtained. Stressgenerated during the cool-down process after oxygen out-diffusion was shownto be compressive. IR imaging and an optical microscopy verifiedthat no cracks occurred during cool-down.
Place, publisher, year, edition, pages
2008. Vol. 16, no 8, 377-383 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-110868DOI: 10.1149/1.2982890OAI: oai:DiVA.org:uu-110868DiVA: diva2:278652
T. Suga J. Bagdahn H. Baumgart C. Colinge K. Hobart H. Moriceau2009-11-272009-11-272016-05-06