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Oxide-Free Silicon to Silicon Carbide Heterobond
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2008 (English)In: ESC Transactions, ISSN 1938-6737, Vol. 16, no 8, 377-383 p.Article in journal (Refereed) Published
Abstract [en]

Thin crystalline device layersof Si were bonded to Si-faced SiC wafers, with eithera chemical or a thermal oxide interface layer. The interfacethermal oxide was successfully removed by oxygen out-diffusion for 2.5h in an Ar atmosphere at 1250 oC. XTEM micrographsshowed that an abrupt transition between Si and SiC withcomplete removal of the interlayer oxide had been obtained. Stressgenerated during the cool-down process after oxygen out-diffusion was shownto be compressive. IR imaging and an optical microscopy verifiedthat no cracks occurred during cool-down.

Place, publisher, year, edition, pages
2008. Vol. 16, no 8, 377-383 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-110868DOI: 10.1149/1.2982890OAI: oai:DiVA.org:uu-110868DiVA: diva2:278652
Note

T. Suga J. Bagdahn H. Baumgart C. Colinge K. Hobart H. Moriceau

Available from: 2009-11-27 Created: 2009-11-27 Last updated: 2016-05-06
In thesis
1. Fabrication and Characterization of Si-on-SiC Hybrid Substrates
Open this publication in new window or tab >>Fabrication and Characterization of Si-on-SiC Hybrid Substrates
2013 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic wafer bonding, we have achieved silicon on crystalline silicon carbide for the first time and silicon on polycrystalline silicon carbide substrates at 150 mm wafer size. The conditions for the wafer bonding are studied and the surface and bond interface are characterized. Stress free and interfacial defect free hybrid wafer bonding has been achieved.

The thermally unfavourable interfacial oxide that originates from the hydrophilic treatment has been removed through high temperature annealing, denoted as Ox-away. Based on the experimental observations, a model to explain the dynamics of this process has been proposed. Ox-away together with spheroidization are found to be the responsible theories for the behaviour. The activation energy for this process is estimated as 6.4 eV.

Wafer bonding of Si and polycrystalline SiC has been realised by an intermediate layer of amorphous Si. This layer recrystallizes to some extent during heat treatment.

Electronic and thermal testing structures have been fabricated on the 150 mm silicon on polycrystalline silicon carbide hybrid substrate and on the SOI reference substrate. It is shown that our hybrid substrates have similar or improved electrical performance and 2.5 times better thermal conductivity than their SOI counterpart. 2D simulations together with the experimental measurements have been carried out to extract the thermal conductivity of polycrystalline silicon carbide as κpSiC = 2.7 WK-1cm-1.

The realised Si-on-SiC hybrid wafer has been shown to be thermally and electrically superior to conventional SOI and opens up for hybrid integration of silicon and wide band gap material as SiC and GaN.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2013. 58 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1093
Keyword
hydrophilic wafer bonding, silicon on silicon carbide, hybrid substrate, oxygen out-diffusion
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
urn:nbn:se:uu:diva-221664 (URN)978-91-554-8794-2 (ISBN)
Public defence
2014-05-16, 2001, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30 (English)
Opponent
Supervisors
Available from: 2014-04-11 Created: 2014-04-03 Last updated: 2014-07-25

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Publisher's full texthttp://link.aip.org/link/abstract/ECSTF8/v16/i8/p377/s1

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Li, Ling-GuangVallin, ÖrjanSmith, UlfNorström, HansOlsson, Jörgen

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