uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Buried aluminum nitride insulator for improving thermal conduction in SOI
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Tunnfilmsgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Tunnfilmsgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2008 (English)In: Proceedings of IEEE SOI Conference, 2008, 105-106 p.Conference paper, Published paper (Refereed)
Abstract [en]

A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.

Place, publisher, year, edition, pages
2008. 105-106 p.
Series
Proceedings - IEEE International SOI Conference, ISSN 1078-621X
Keyword [en]
aluminium compounds, buried layers, elemental semiconductors, insulating thin films, semiconductor thin films, silicon, silicon-on-insulator, thermal conductivity, thermal resistance, SOI substrates, Si-AlN, alpha-silicon layer, aluminum nitride film, buried aluminum nitride insulator, thermal conduction, thermal resistance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-110987OAI: oai:DiVA.org:uu-110987DiVA: diva2:279080
Conference
IEEE SOI Conference
Available from: 2009-12-01 Created: 2009-12-01 Last updated: 2016-04-13

Open Access in DiVA

No full text

Authority records BETA

Martin, DavidVallin, ÖrjanKatardjiev, IliaOlsson, Jörgen

Search in DiVA

By author/editor
Martin, DavidVallin, ÖrjanKatardjiev, IliaOlsson, Jörgen
By organisation
Solid State ElectronicsSolid State Electronics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 825 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf