Buried aluminum nitride insulator for improving thermal conduction in SOI
2008 (English)In: Proceedings of IEEE SOI Conference, 2008, 105-106 p.Conference paper (Refereed)
A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.
Place, publisher, year, edition, pages
2008. 105-106 p.
, Proceedings - IEEE International SOI Conference, ISSN 1078-621X
aluminium compounds, buried layers, elemental semiconductors, insulating thin films, semiconductor thin films, silicon, silicon-on-insulator, thermal conductivity, thermal resistance, SOI substrates, Si-AlN, alpha-silicon layer, aluminum nitride film, buried aluminum nitride insulator, thermal conduction, thermal resistance
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-110987OAI: oai:DiVA.org:uu-110987DiVA: diva2:279080
IEEE SOI Conference