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Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2008 (English)In: Proceedings of ULIS, 2008, 175-178 p.Conference paper, Published paper (Refereed)
Abstract [en]

This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.

Place, publisher, year, edition, pages
2008. 175-178 p.
Keyword [en]
MOSFET, Schottky barriers, ion implantation, silicon-on-insulator, PtSi-Si, Schottky barrier source/drain MOSFET, dopant segregation, leakage current, metal-oxide-semiconductor field effect transistor, silicon implantation, silicon on insulator, ultrathin body SOI, underlap length, PtSi, Si implantation, dopant segregation, schottky barrier-MOSFET, underlap length
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-110994OAI: oai:DiVA.org:uu-110994DiVA: diva2:279095
Conference
Ultimate Integration of Silicon, Udine, Italy
Available from: 2009-12-01 Created: 2009-12-01 Last updated: 2016-04-13

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Olsson, JörgenLu, J.

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