Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
2008 (English)In: Proceedings of ULIS, 2008, 175-178 p.Conference paper (Refereed)
This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.
Place, publisher, year, edition, pages
2008. 175-178 p.
MOSFET, Schottky barriers, ion implantation, silicon-on-insulator, PtSi-Si, Schottky barrier source/drain MOSFET, dopant segregation, leakage current, metal-oxide-semiconductor field effect transistor, silicon implantation, silicon on insulator, ultrathin body SOI, underlap length, PtSi, Si implantation, dopant segregation, schottky barrier-MOSFET, underlap length
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:uu:diva-110994OAI: oai:DiVA.org:uu-110994DiVA: diva2:279095
Ultimate Integration of Silicon, Udine, Italy