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Thermal characterization of Silicon-on-SiC substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Tunnfilmsgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
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2008 (English)In: Proceedings of IEEE International SOI Conference, 2008, 69-70 p.Conference paper, Published paper (Refereed)
Abstract [en]

Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the BaSiC. Transmission electron microscopy reveals a defect free bond and recrystallization of the amorphous silicon, which improves the heat conductivity.

Place, publisher, year, edition, pages
2008. 69-70 p.
Keyword [en]
amorphous semiconductors, elemental semiconductors, recrystallisation, silicon, thermal conductivity, transmission electron microscopy, MOSFET self-heating effects, Si, SiC, amorphous silicon, defect free bond, heat conductivity, recrystallization, silicon-on-SiC substrates, thermal characterization, thermal resistivity, transmission electron microscopy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-111000ISBN: 1078-621X (print)OAI: oai:DiVA.org:uu-111000DiVA: diva2:279104
Conference
IEEE International SOI Conference
Available from: 2009-12-01 Created: 2009-12-01 Last updated: 2016-04-13

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Vallin, ÖrjanMartin, DavidLu, JunLi, L. G.Smith, UlfNorström, HansOlsson, Jörgen

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