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Epitaxial NiO(100) and NiO(111) films grown by atomic layer deposition
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microstructure Laboratory.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 16, 4082-4088 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic   layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates   at temperatures as low as 200 degrees C by using   bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as   precursors. The films grown on the MgO (1 0 0) substrate show the   expected cube on cube growth while the NiO (1 1 1) films grow with a   twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface.   The films had columnar microstructures on both substrate types. The   single grains were running throughout the whole film thickness and were   significantly smaller in the direction parallel to the surface. Thin   NiO (1 1 1) films can be grown with high crystal quality with a FWHM of   0.02-0.05 degrees in the rocking curve measurements.

Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 311, no 16, 4082-4088 p.
Keyword [en]
Atomic layer deposition, X-ray diffraction, Transmission electron microscopy, NiO (100), NiO (111), Crystallite size
National Category
Chemical Sciences Engineering and Technology
Research subject
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-111450DOI: 10.1016/j.jcrysgro.2009.06.030ISI: 000269580100018OAI: oai:DiVA.org:uu-111450DiVA: diva2:281235
Available from: 2009-12-15 Created: 2009-12-15 Last updated: 2016-04-14Bibliographically approved
In thesis
1. Thin Film Synthesis of Nickel Containing Compounds
Open this publication in new window or tab >>Thin Film Synthesis of Nickel Containing Compounds
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials.  In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds.

A chemical vapor deposition (CVD) method for deposition of metastable Ni3N has been developed.  The deposition process employs ammonia as nitrogen precursor. An atomic layer deposition (ALD) process for deposition of both polycrystalline and epitaxial NiO and using low oxygen activity, has also been developed. Both deposition processes utilizes bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) (Ni(thd)2) as the metal precursor. The Ni3N deposition proceeds via surface reactions. The growth rate is very sensitive to the partial pressure of ammonia, why adsorbed –NHx species are believed to be of importance for the film growth. Similar reactions can be expected between the metal precursor and H2O. For ALD of NiO a large excess of water was needed

For the multilayered structures of Ni3N/NiO, growth processes, working at low activities of oxygen and hydrogen, are needed to avoid oxidation or reduction of the underlying layer. Chemical vapor growth methods such as CVD and ALD are often suffering from using high activities of hydrogen or oxygen to deposit metals and oxides. An alternative deposition pathway for metal deposition, without any hydrogen in the vapor, has been demonstrated. The metal has been formed by decomposition of the metastable nitride Ni3N in a post-annealing process.  Ni3N decomposes via different mechanisms, depending on environment in the annealing process. The different mechanisms result in different degrees of ordering in the resulting Ni films. From the knowledge gained about the chemical growth of NiO and Ni3N as well as the decomposition of Ni3N, well-defined multilayer structures have been produced in different combinations of NiO, Ni3N and Ni.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2009. 57 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 701
Keyword
Chemical Vapor Deposition, CVD, Atomic Layer Deposition, ALD, Nickel nitride, Nickel oxide, Nickel, Epitaxy, multilayer, Thin film
National Category
Inorganic Chemistry
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-111484 (URN)978-91-554-7688-5 (ISBN)
Public defence
2010-02-05, 2001, lägerhyddsvägen 1, The Ångström laboratory, 10:15 (English)
Opponent
Supervisors
Available from: 2010-01-15 Created: 2009-12-15 Last updated: 2010-05-24

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Lindahl, ErikLu, Jun

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