Epitaxial NiO(100) and NiO(111) films grown by atomic layer deposition
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 16, 4082-4088 p.Article in journal (Refereed) Published
Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates at temperatures as low as 200 degrees C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02-0.05 degrees in the rocking curve measurements.
Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 311, no 16, 4082-4088 p.
Atomic layer deposition, X-ray diffraction, Transmission electron microscopy, NiO (100), NiO (111), Crystallite size
Chemical Sciences Engineering and Technology
Research subject Inorganic Chemistry
IdentifiersURN: urn:nbn:se:uu:diva-111450DOI: 10.1016/j.jcrysgro.2009.06.030ISI: 000269580100018OAI: oai:DiVA.org:uu-111450DiVA: diva2:281235