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Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
2009 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 15, no 7-9, 186-191 p.Article in journal (Refereed) Published
Abstract [en]

Polycrystalline nickel oxide is deposited on SiO2 substrates by   alternating pulses of   bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd)(2)) and   H2O. The deposition process shows atomic layer deposition (ALD)   characteristics with respect to the saturation behavior of the two   precursors at deposition temperatures up to 275 degrees C. The growth   of nickel oxide is shown to be highly dependent on surface hydroxide   groups, and a large excess of H2O is required to achieve saturation.   Throughout the deposition temperature range the amount of carbon in the   film, originating from the metal precursor ligand, is in the range   1-2%. Above 275 degrees C ALD growth behavior is lost in favor of   thermal decomposition of the metal precursor. The initial nucleation   process is studied by atomic force microscopy (AFM) and reveals   nucleation of well-separated grains which coalesce to a continuous film   after about 250 ALD cycles.

Place, publisher, year, edition, pages
WILEY , 2009. Vol. 15, no 7-9, 186-191 p.
Keyword [en]
ALD, growth rate, morphology, nickel oxide, Ni(thd)(2)
National Category
Chemical Sciences
Research subject
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-111451DOI: 10.1002/cvde.200906762ISI: 000270343800005OAI: oai:DiVA.org:uu-111451DiVA: diva2:281242
Available from: 2009-12-15 Created: 2009-12-15 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Thin Film Synthesis of Nickel Containing Compounds
Open this publication in new window or tab >>Thin Film Synthesis of Nickel Containing Compounds
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials.  In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds.

A chemical vapor deposition (CVD) method for deposition of metastable Ni3N has been developed.  The deposition process employs ammonia as nitrogen precursor. An atomic layer deposition (ALD) process for deposition of both polycrystalline and epitaxial NiO and using low oxygen activity, has also been developed. Both deposition processes utilizes bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) (Ni(thd)2) as the metal precursor. The Ni3N deposition proceeds via surface reactions. The growth rate is very sensitive to the partial pressure of ammonia, why adsorbed –NHx species are believed to be of importance for the film growth. Similar reactions can be expected between the metal precursor and H2O. For ALD of NiO a large excess of water was needed

For the multilayered structures of Ni3N/NiO, growth processes, working at low activities of oxygen and hydrogen, are needed to avoid oxidation or reduction of the underlying layer. Chemical vapor growth methods such as CVD and ALD are often suffering from using high activities of hydrogen or oxygen to deposit metals and oxides. An alternative deposition pathway for metal deposition, without any hydrogen in the vapor, has been demonstrated. The metal has been formed by decomposition of the metastable nitride Ni3N in a post-annealing process.  Ni3N decomposes via different mechanisms, depending on environment in the annealing process. The different mechanisms result in different degrees of ordering in the resulting Ni films. From the knowledge gained about the chemical growth of NiO and Ni3N as well as the decomposition of Ni3N, well-defined multilayer structures have been produced in different combinations of NiO, Ni3N and Ni.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2009. 57 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 701
Keyword
Chemical Vapor Deposition, CVD, Atomic Layer Deposition, ALD, Nickel nitride, Nickel oxide, Nickel, Epitaxy, multilayer, Thin film
National Category
Inorganic Chemistry
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-111484 (URN)978-91-554-7688-5 (ISBN)
Public defence
2010-02-05, 2001, lägerhyddsvägen 1, The Ångström laboratory, 10:15 (English)
Opponent
Supervisors
Available from: 2010-01-15 Created: 2009-12-15 Last updated: 2010-05-24

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