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Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 MeV iodine ion irradiation
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2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 404, no 23-24, 4925-4928 p.Article in journal (Refereed) Published
Abstract [en]

The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV lion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 10(11) ions/cm(2). It is observed that even the ion fluences in the 10(9) ions/cm(2) range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis.

Place, publisher, year, edition, pages
2009. Vol. 404, no 23-24, 4925-4928 p.
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Physical Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-111687DOI: 10.1016/j.physb.2009.08.233ISI: 000276029300117OAI: oai:DiVA.org:uu-111687DiVA: diva2:282465
Available from: 2009-12-21 Created: 2009-12-21 Last updated: 2017-12-12Bibliographically approved

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Hjort, KlasJensen, Jens

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