Conductivity engineering of graphene by defect formation
2010 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 43, no 4, 045404- p.Article in journal (Refereed) Published
Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behaviour around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.
Place, publisher, year, edition, pages
IOP Publishing , 2010. Vol. 43, no 4, 045404- p.
Nano Technology Electrical Engineering, Electronic Engineering, Information Engineering Materials Engineering
Research subject Chemistry with specialization in Organic Chemistry; Chemistry with specialization in Inorganic Chemistry
IdentifiersURN: urn:nbn:se:uu:diva-112356DOI: 10.1088/0022-3727/43/4/045404ISI: 000273551300016OAI: oai:DiVA.org:uu-112356DiVA: diva2:285963