Theoretical evidence of a superconducting transition in doped silicon and germanium driven by a variation of chemical composition
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 5, 052505- p.Article in journal (Refereed) Published
We present the first theoretical evidence of chemical composition driven superconductivity in acceptor-doped silicon and germanium, using density functional theory. We examine the concentration dependence of T-c in B-doped Si and Ge and predict that B-doped Ge is a superconductor with a slightly higher T-c than B-doped Si. We show that there is a critical concentration above which B-doped Si and Ge become superconducting and estimate it to be similar to 2.6% in Si:B and similar to 2.2% in Ge:B. Considering the Al-doped Si and Ge, we point out the decisive role of the chemical element in the hole-doping scenario.
Place, publisher, year, edition, pages
2008. Vol. 92, no 5, 052505- p.
IdentifiersURN: urn:nbn:se:uu:diva-112991DOI: 10.1063/1.2840696ISI: 000253016500050OAI: oai:DiVA.org:uu-112991DiVA: diva2:289417