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Theoretical evidence of a superconducting transition in doped silicon and germanium driven by a variation of chemical composition
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Materials Science, Materials Theory.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Materials Science, Materials Theory.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Materials Science, Materials Theory.
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 5, 052505- p.Article in journal (Refereed) Published
Abstract [en]

We present the first theoretical evidence of chemical composition driven superconductivity in acceptor-doped silicon and germanium, using density functional theory. We examine the concentration dependence of T-c in B-doped Si and Ge and predict that B-doped Ge is a superconductor with a slightly higher T-c than B-doped Si. We show that there is a critical concentration above which B-doped Si and Ge become superconducting and estimate it to be similar to 2.6% in Si:B and similar to 2.2% in Ge:B. Considering the Al-doped Si and Ge, we point out the decisive role of the chemical element in the hole-doping scenario.

Place, publisher, year, edition, pages
2008. Vol. 92, no 5, 052505- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-112991DOI: 10.1063/1.2840696ISI: 000253016500050OAI: oai:DiVA.org:uu-112991DiVA: diva2:289417
Available from: 2010-01-25 Created: 2010-01-25 Last updated: 2017-12-12Bibliographically approved

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Kádas, KrisztinaVitos, LeventeAhuja, Rajeev

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