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A comparison of transient boron diffusion in silicon, silicon carbide and diamond
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
2009 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 600-603, 453-6 p.Article in journal (Refereed) Published
Abstract [en]

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 2x1014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

Place, publisher, year, edition, pages
Switzerland: Trans Tech Publications Ltd. , 2009. Vol. 600-603, 453-6 p.
Keyword [en]
annealing, carrier density, diamond, diffusion, elemental semiconductors, ion implantation, secondary ion mass spectra, silicon, silicon compounds, wide band gap semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-113149DOI: 10.4028/www.scientific.net/MSF.600-603.453ISBN: 0255-5476 OAI: oai:DiVA.org:uu-113149DiVA: diva2:289876
Note

10669410 transient boron diffusion secondary ion mass spectrometry ion implantation annealing intrinsic carrier concentration electron volt energy 300 keV temperature 800 C to 1650 C B-Si B-SiC B-C

Available from: 2010-01-25 Created: 2010-01-25 Last updated: 2017-01-25Bibliographically approved

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Isberg, Jan

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