A lateral time-of-flight system for charge transport studies
2009 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 18, no 9, 1163-1166 p.Article in journal (Refereed) Published
A measurement system for lateral ToF charge carrier transport studies in intrinsic diamond is described. In the lateral ToF geometry, carriers travel close to the sample surface and the system is therefore particularly suited for studies of thin layers as well as the influence of different surface conditions on transport dynamics. A 213nm pulsed UV laser is used to create electron-hole pairs along a line focus between two parallel metal electrodes on one surface. The use of reflective UV-optics with short focal length allows for a narrow focal line and also for imaging the sample in UV or visible light without any dispersion. A clear hole transit was observed in one homoepitaxial single crystalline diamond film for which the substrate was treated by a Ar/Cl plasma etch prior to deposition. The hole transit signal was sufficiently clear to measure the near-surface hole drift mobility of about 860cm2/Vs across a contact spacing of 0.3mm.
Place, publisher, year, edition, pages
Langford Lane, Kidlington, Oxford, OX5 1GB, United Kingdom: Elsevier Ltd , 2009. Vol. 18, no 9, 1163-1166 p.
Mobility, Time-of-Flight, CVD diamond, Single crystal diamond
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-113146DOI: 10.1016/j.diamond.2009.03.002ISI: 000268610700020ISBN: 09259635OAI: oai:DiVA.org:uu-113146DiVA: diva2:289901
Compilation and indexing terms, Copyright 2009 Elsevier Inc. 20092812180300 Charge transport CVD diamond Electron hole pairs Focal lengths Homoepitaxial Line-focus Measurement system Metal electrodes Mobility Near-surface Plasma etch Pulsed UV-lasers Sample surface Single crystal diamond Single-crystalline diamond Surface conditions Thin layers Time-of-Flight Time-of-flight system Transport dynamics Visible light2010-01-252010-01-252016-04-14Bibliographically approved