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Unlocking diamond's potential as an electronic material
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2008 (English)In: Philosophical Transactions. Series A: Mathematical, physical, and engineering science, ISSN 1364-503X, E-ISSN 1471-2962, Vol. 366, no 1863, 251-265 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30mAmm -1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.

Place, publisher, year, edition, pages
London: Royal Society of London , 2008. Vol. 366, no 1863, 251-265 p.
Keyword [en]
Potential energy, Doping (additives), Electric potential, MESFET devices, Semiconductor materials, Synthetic diamonds
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-113191DOI: 10.1098/rsta.2007.2153ISI: 000251927100009ISBN: 1364503X (print)OAI: oai:DiVA.org:uu-113191DiVA: diva2:290113
Note

Compilation and indexing terms, Copyright 2009 Elsevier Inc. 20081311166919 High-power applications Switching voltages

Available from: 2010-01-26 Created: 2010-01-26 Last updated: 2017-12-12Bibliographically approved

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Isberg, Jan

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