Implantation of anatase thin film with 100 keV 56Fe ions: Damage formation and magnetic behaviour
2009 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 267, no 16, 2725-2730 p.Article in journal (Refereed) Published
We have investigated the damage morphology and magnetic properties of titanium dioxide thin films following implantation with Fe ions. The titanium dioxide films, having a polycrystalline anatase structure, were implanted with 100 keV 56Fe+ ions to a total fluence of 1.3 × 1016 ions/cm2. The ion bombardment leads to an amorphized surface with no indication of the presence of secondary phases or Fe clusters. The ion-beam induced damage manifested itself by a marked change in surface morphology and film thickness. A room temperature ferromagnetic behaviour was observed by SQUID in the implanted sample. It is believed that the ion-beam induced damage and defects in the polycrystalline anatase film were partly responsible for the observed magnetic response.
Place, publisher, year, edition, pages
2009. Vol. 267, no 16, 2725-2730 p.
Ion implantation, Magnetic semiconductors, Fe-doping, Titanium dioxide, Anatase, Magnetron sputtering
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-113667DOI: 10.1016/j.nimb.2009.05.055ISI: 000272422400039ISBN: 0168-583XOAI: oai:DiVA.org:uu-113667DiVA: diva2:291596