Sputtering of highly adhesive Mo back contact layers for Cu(In,Ga)Se2 solar cells
2009 (English)Conference paper (Other (popular science, discussion, etc.))
In this work the sputter process for back contact Mo layers was adjusted to increase the adhesive strength of the Mo layers to the glass substrate, while keeping a high deposition rate and high conductivity. Mo layers were fabricated using DC magnetron sputtering in an in-line sputtering system. The adhesive strength was tested with ultrasonic agitation. The combination of good adhesion and high deposition rate was obtained by using a double layer, where the thickness of the first adhesion layer was varied between 25 and 100 nm and sputtered at 15 mTorr, whereas the second bulk layer was varied between 300 and 600 nm and sputtered at 6 mTorr. Solar cells were prepared for all different thicknesses of the adhesive layer and showed similar performance.
Place, publisher, year, edition, pages
München: WIP-Renewable Energies , 2009. 3037- p.
CIGS, sputtering, Mo back contact
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Electronics
IdentifiersURN: urn:nbn:se:uu:diva-113931OAI: oai:DiVA.org:uu-113931DiVA: diva2:292198
Proceedings of the 24th European Photovoltaic Solar Energy Conference