IC-compatible Power Oscillators Using Thin Film Plate Acoustic Resonator (FPAR)
2009 (English)In: Proceedings 2009 IEEE International Ultrasonics Symposium, 2009Conference paper (Refereed)
In this study, two-port 880MHz FPAR devicesoperating on the lowest order fast symmetric Lamb wave mode(S0) in c-oriented AlN membranes on Si, were fabricated andsubsequently tested for their power handling capabilities in afeedback-loop power oscillator circuit. The S0 Lamb waves wereexcited and detected by a classical two-port resonator structure,as in Rayleigh SAW (RSAW) resonators. Incident power levels ofup to 24 dBm (250 mW) for the FPARs were provided by a high powersustaining amplifier in the loop. No measurable performance degradation was observed. The results from this study indicate that IC-compatible S0 FPAR devices can dissipate orders of magnitude higher RF-power levels than their RSAWcounterparts on quartz and are well suited for integrated microwave power oscillators with thermal noise floor (TNF) levelsbelow -175 dBc/Hz.
Place, publisher, year, edition, pages
Thin Film, Plate, Integrated, Oscillator
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-114255OAI: oai:DiVA.org:uu-114255DiVA: diva2:293623
2009 Int. IEEE Ultrasonic Symposia
ProjectsVR granted: "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications"
In Print2010-02-122010-02-122016-04-14Bibliographically approved