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IC-compatible Power Oscillators Using Thin Film Plate Acoustic Resonator (FPAR)
Bulgarian Academy of Sciences. (Electroacoustic)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
University of Sofia. (Microacoustics)
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2009 (English)In: Proceedings 2009 IEEE International Ultrasonics Symposium, 2009Conference paper, Published paper (Refereed)
Abstract [en]

In this study, two-port 880MHz FPAR devicesoperating on the lowest order fast symmetric Lamb wave mode(S0) in c-oriented AlN membranes on Si, were fabricated andsubsequently tested for their power handling capabilities in afeedback-loop power oscillator circuit. The S0 Lamb waves wereexcited and detected by a classical two-port resonator structure,as in Rayleigh SAW (RSAW) resonators. Incident power levels ofup to 24 dBm (250 mW) for the FPARs were provided by a high powersustaining amplifier in the loop. No measurable performance degradation was observed. The results from this study indicate that IC-compatible S0 FPAR devices can dissipate orders of magnitude higher RF-power levels than their RSAWcounterparts on quartz and are well suited for integrated microwave power oscillators with thermal noise floor (TNF) levelsbelow -175 dBc/Hz.

Place, publisher, year, edition, pages
2009.
Keyword [en]
Thin Film, Plate, Integrated, Oscillator
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-114255OAI: oai:DiVA.org:uu-114255DiVA: diva2:293623
Conference
2009 Int. IEEE Ultrasonic Symposia
Projects
VR granted: "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications"
Note

In Print

Available from: 2010-02-12 Created: 2010-02-12 Last updated: 2016-04-14Bibliographically approved

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Arapan, LiliaKatardjiev, IliaYantchev, Ventsislav

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