Electronic structure of a laterally graded ZrO2-TiO2 film on Si(100) prepared by metal-organic chemical vapor deposition in ultrahigh vacuum
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Journal of Applied Physics, Vol. 103, no 9, 094109-094109-8 p.Article in journal (Refereed) Published
A TiO2-ZrO2 film with laterally graded stoichiometry has been prepared by metal-organic chemical vapor deposition in ultrahigh vacuum. The film was characterized in situ using synchrotron radiation photoelectron spectroscopy (PES) and x-ray absorption spectroscopy. PES depth profiling clearly shows that Ti ions segregate toward the surface region when mixed with ZrO2. The binding energy of the ZrO2 electronic levels is constant with respect to the local vacuum level. The binding energy of the TiO2 electronic levels is aligned to the Fermi level down to a Ti/Zr ratio of about 0.5. At a Ti/Zr ratio between 0.1 and 0.5, the TiO2 related electronic levels become aligned to the local vacuum level. The addition of small amounts of TiO2 to ZrO2 results in a ZrO2 band alignment relative to the Fermi level that is less asymmetric than for pure ZrO2. The band edge positions shift by -0.6 eV for a Ti/Zr ratio of 0.03. This is explained in terms of an increase in the work function when adding TiO2, an effect that becomes emphasized by Ti surface segregation.
Place, publisher, year, edition, pages
2008. Vol. 103, no 9, 094109-094109-8 p.
Other inorganic compounds, Surface double layers, Schottky barriers, and work functions, Composition, segregation; defects and impurities, Insulators, Chemical vapor deposition, X-ray absorption spectra
IdentifiersURN: urn:nbn:se:uu:diva-114300DOI: 10.1063/1.2924427ISI: 000255983200115OAI: oai:DiVA.org:uu-114300DiVA: diva2:293716