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Temperature dependence and dielectric properties of dominant low-frequency noise sources in SiGe HBT
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences.
2000 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 47, no 5, 1107-1112 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2000. Vol. 47, no 5, 1107-1112 p.
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Engineering and Technology
URN: urn:nbn:se:uu:diva-114361DOI: 10.1109/16.841247OAI: oai:DiVA.org:uu-114361DiVA: diva2:293827
Available from: 2010-02-14 Created: 2010-02-14 Last updated: 2010-02-15Bibliographically approved

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