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Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microwave and Terahertz Technology.
1999 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 46, no 5, 993-1000 p.Article in journal (Refereed) Published
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1999. Vol. 46, no 5, 993-1000 p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-114365DOI: 10.1109/16.760408OAI: oai:DiVA.org:uu-114365DiVA: diva2:293831
Available from: 2010-02-14 Created: 2010-02-14 Last updated: 2017-12-12Bibliographically approved

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