Increased efficiency in RF-power SOI-LDMOS transistors
2009 (English)In: Proceedings of EUROSOI: Fifth Workshop of the Thematic Network on Silicon-On-Insulator, Technology, Devices and Circuits, 2009, 117-118 p.Conference paper (Refereed)
The effect of substrate resistivity on efficiency in high-power operation of high-frequency SOI-LDMOS transistors is for the first time investigated using computational load-pull simulations. Identical SOI-LDMOS transistors have been studied on different substrate resistivities. Their highpower performance has been compared to previous investigations concerning the off-state ROUT to high-efficiency relation. It is shown that albeit high off-state ROUT is a good indication it may not always be sufficient for high efficiency operation. The bias and frequency dependency of the coupling through the substrate makes a more detailed on-state analysis necessary. It is shown that very low resistivity and high resistivity SOI-substrates both result in high efficiency at the studied frequency and bias-point. It is also shown thata normally doped, medium resistivity, substrate results in significantly lower efficiency.
Place, publisher, year, edition, pages
2009. 117-118 p.
SOI, Load-Pull, Power Amplifier, Electronics, Elektronik
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-114483OAI: oai:DiVA.org:uu-114483DiVA: diva2:294235