Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
2010 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, no 2, 153-157 p.Article in journal (Refereed) Published
We have made a comparative study of the oxygen out-diffusion process during heat treatment of SOI wafers and SiC-SOI hybrid substrates. SOI materials with three different thicknesses (2, 20 and 410 nm) of buried oxide (BOX) were used in the investigation High-resolution cross-sectional transmission electron microscopy (HRXTEM) together with laser interferometry was used to determine the remaining thickness of the BOX-layer after heat treatment. After complete removal of the BOX-layer of SOI wafers, the St/Si interface appears to be sharp and defect-free. Similar results were obtained for SiC-SOI hybrid substrates after removal of the entire buried oxide layer. For all combinations investigated oxide removal was accompanied by a thickness reduction and roughening of the silicon surface layer as verified by atomic force microscopy (AFM).
Place, publisher, year, edition, pages
2010. Vol. 54, no 2, 153-157 p.
Oxygen out-diffusion, SOI, silicon carbide, SiC-SOI
Condensed Matter Physics Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-117563DOI: 10.1016/j.sse.2009.12.011ISI: 000275691400012OAI: oai:DiVA.org:uu-117563DiVA: diva2:297977