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Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 3, 031911- p.Article in journal (Refereed) Published
Abstract [en]

The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x=0) and for tNi<4 nm, epitaxially aligned NiSi2−y films readily grow and exhibit extraordinary morphological stability up to 800 °C. For tNi≥4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x=1) and for tPt=1–20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1−xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.

Place, publisher, year, edition, pages
2010. Vol. 96, no 3, 031911- p.
Keyword [en]
annealing, crystal morphology, metallic epitaxial layers, nanostructured materials, nickel alloys, nickel compounds, surface energy
National Category
Physical Sciences Engineering and Technology
URN: urn:nbn:se:uu:diva-119226DOI: 10.1063/1.3291679ISI: 000273890500024OAI: oai:DiVA.org:uu-119226DiVA: diva2:299868
Available from: 2010-02-24 Created: 2010-02-24 Last updated: 2016-04-18Bibliographically approved

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