Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 7, 071915- p.Article in journal (Refereed) Published
This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 °C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime.
Place, publisher, year, edition, pages
2010. Vol. 96, no 7, 071915- p.
electrical resistivity, metallic thin films, nickel alloys, platinum alloys, silicon
Physical Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-119267DOI: 10.1063/1.3323097ISI: 000274758100032OAI: oai:DiVA.org:uu-119267DiVA: diva2:299919