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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni[sub 1 - x]Pt[sub x] on Si substrate
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 7, 071915- p.Article in journal (Refereed) Published
Abstract [en]

This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 °C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime.

Place, publisher, year, edition, pages
2010. Vol. 96, no 7, 071915- p.
Keyword [en]
electrical resistivity, metallic thin films, nickel alloys, platinum alloys, silicon
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-119267DOI: 10.1063/1.3323097ISI: 000274758100032OAI: oai:DiVA.org:uu-119267DiVA: diva2:299919
Available from: 2010-02-24 Created: 2010-02-24 Last updated: 2017-12-12Bibliographically approved

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Zhang, ZhenShi-Li, Zhang

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