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Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods
Department of Physics, Chemistry and Biology, IFM, Thin Film Physics Division, Linköping University, Linköping, Sweden.
Departamento de Física de la Tierra, Astronomía y Astrofísica I, Universidad Complutense de Madrid, Madrid, Spain.
Department of Physics, Chemistry and Biology, IFM, Thin Film Physics Division, Linköping University, Linköping, Sweden.
Department of Physics, Chemistry and Biology, IFM, Thin Film Physics Division, Linköping University, Linköping, Sweden.
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2010 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 81, 085125- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by calculated spectra using first-principles density-functional theory DFT including dipole transition matrix elements and additional on-site Coulomb interaction WC-GGA+U. TheGa 4p-N 2p and Ga 4s-N 2p hybridization and chemical bond regions are identified at the top of the valence band between −1.0 and −2.0 and further down between −5.5 and −6.5 eV, respectively. In addition, N 2s-N 2p-Ga 4s and N 2s-N 2p-Ga 3d hybridization regions occur at the bottom of the valence band between −13 and −15 eV, and between −17.0 and −18.0 eV, respectively. A bandlike satellite feature is also found around −10 eV in the Ga M1 and Ga M2,3 emission from GaN, but is absent in pure Ga and the calculated ground-state spectra. The difference between the identified spectroscopic features of GaN and Ga are discussed in relation to the various hybridization regions calculated within band-structure methods.

Place, publisher, year, edition, pages
2010. Vol. 81, 085125- p.
Keyword [en]
Semiconductor, XAS, RIXS, XES, x-ray emission and absorption spectroscopy
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:uu:diva-119708DOI: 10.1103/PhysRevB.81.085125OAI: oai:DiVA.org:uu-119708DiVA: diva2:300710
Available from: 2010-03-01 Created: 2010-02-28 Last updated: 2017-12-12Bibliographically approved

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Physical Review B Condensed Matter
Condensed Matter Physics

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