Influence of defects on the magnetism of Mn-doped ZnO
2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 9, 09H101- p.Article in journal (Refereed) Published
The properties of dilute magnetic semiconductors are usually strongly influenced by the defects present in the system. Ab initio calculations may provide valuable insight for the microscopic understanding of the interactions with defects. Here, we present studies of Mn-doped ZnO in the presence of several defects by a combined approach of ab initio electronic structure calculations using Korringa-Kohn-Rostoker-coherent potential approximation and Monte Carlo simulations (MCSs). Electronic structure and magnetic interactions have similar trends for wurtzite and zinc-blende crystal structures. A weak antiferromagnetic interaction has been found for 5% Mn doping in defect-free ZnO. Defects such as O vacancies and Zn interstitials lead to antiferromagnetic interactions between the Mn atoms, while Zn vacancies and oxygen substitution by nitrogen yield ferromagnetic interactions. As the concentration of Mn is low and the exchange interactions are short ranged, MCSs show small values of Curie temperatures (not more than 50 K). However, for a few cases with codoping of Mn and defects, we obtained higher Curie temperatures (around 130 K). Estimates of the Curie temperatures, assuming an average separation of the Mn atoms in the mean-field solution of Heisenberg model, are in very good agreement with the results obtained from MCS.
Place, publisher, year, edition, pages
2007. Vol. 101, no 9, 09H101- p.
IdentifiersURN: urn:nbn:se:uu:diva-119896DOI: 10.1063/1.2709411ISI: 000246567900308OAI: oai:DiVA.org:uu-119896DiVA: diva2:301219