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Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2009 (English)In: EUROSOI 2009 CONFERENCE PROCEEDINGS: Fifth Workshop of the Thematic Network on Silicon-on-Insulator, Technology, Devices and Circuits / [ed] Olof Engström, 2009, 85-86 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have studied the SiO2 out-diffusion (Ox-away) process from Si/SiC hybrid substrates (Si-SiO2-SiC), thin BOX SOI and commercial SOI. For the former two kinds of substrates, HRXTEM micrographs show that after complete oxygen out-diffusion, the Si/SiC or Si/Si interfaces are sharp, and apparently defect-free. The BOX of commercial SOI has partially been diffused away. For all three substrate types, the thickness of top thin Si layers has become thinner and the Si was discovered under HRXTEM above the top Si. XPS results indicate that it only contains Si.

Place, publisher, year, edition, pages
2009. 85-86 p.
National Category
Condensed Matter Physics Engineering and Technology
Research subject
Electronics
Identifiers
URN: urn:nbn:se:uu:diva-120532OAI: oai:DiVA.org:uu-120532DiVA: diva2:303512
Conference
EuroSOI 2009
Available from: 2010-03-12 Created: 2010-03-12 Last updated: 2016-04-14

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Li, LingguangVallin, ÖrjanSmith, UlfNorström, HansOlsson, Jörgen

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