Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates
2009 (English)In: EUROSOI 2009 CONFERENCE PROCEEDINGS: Fifth Workshop of the Thematic Network on Silicon-on-Insulator, Technology, Devices and Circuits / [ed] Olof Engström, 2009, 85-86 p.Conference paper (Refereed)
We have studied the SiO2 out-diffusion (Ox-away) process from Si/SiC hybrid substrates (Si-SiO2-SiC), thin BOX SOI and commercial SOI. For the former two kinds of substrates, HRXTEM micrographs show that after complete oxygen out-diffusion, the Si/SiC or Si/Si interfaces are sharp, and apparently defect-free. The BOX of commercial SOI has partially been diffused away. For all three substrate types, the thickness of top thin Si layers has become thinner and the Si was discovered under HRXTEM above the top Si. XPS results indicate that it only contains Si.
Place, publisher, year, edition, pages
2009. 85-86 p.
Condensed Matter Physics Engineering and Technology
Research subject Electronics
IdentifiersURN: urn:nbn:se:uu:diva-120532OAI: oai:DiVA.org:uu-120532DiVA: diva2:303512