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150 mm Silicon-on-polycrystalline-Silicon Carbide
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
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2010 (English)In: Proceedings of EUROSOI: Sixth Workshop of the Thematic Network on Silicon-On-Insulator / [ed] Sorin Cristoloveanu, Olivier Faynot, 2010, 101-102 p.Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

150 mm Silicon-on-polycrystallin-Silicon Carbie (poly-SiC) bybrid substrate, without intermediate oxide layers have been realised by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step was introduced before furnace annealing to avoid bubble formation, cracks and breakage. After removal of the Si handle and the buried oxide, the reamining Si device layer was shown to be stress free by Raman spectroscopy and X-ray diffraction (XRD) measurements.

Place, publisher, year, edition, pages
2010. 101-102 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-120565OAI: oai:DiVA.org:uu-120565DiVA: diva2:303614
Conference
EUROSOI 2010
Available from: 2010-03-15 Created: 2010-03-15 Last updated: 2016-04-19

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Vallin, ÖrjanLi, LingguangNorström, HansSmith, UlfOlsson, Jörgen

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