Effects of CuIn0,5Ga0,5Se2 growth by isothermal and bithermal Cu-Poor/Rich/Poor sequence on solar cells properties
2009 (English)In: Thin-Film Compound Semiconductor Photovoltaics — 2009 / [ed] A. Yamada, C. Heske, M. Contreras, M. Igalson, S.J.C. Irvine, Warrendale, PA: Material Research Society , 2009, , 6 p.Conference paper (Other academic)
Co-evaporated CuIn0,5Ga0,5Se2 thin film solar cells were grown using a sequential Cu-Poor/Rich/Poor process (CUPRO). During the growth process, the substrate temperature was either kept constant at 570 °C (iso-CUPRO) or decreased during the first step to either 360 or 430 or 500 °C (bi-CUPRO). According to atomic force microscopy (AFM) measurements, the lower the temperature is in the first step the smoother the final CIGS surface becomes. By decreasing the first step temperature, cross-section scanning electron microscopy (SEM) and q-2q x-ray diffraction (XRD) do not reveal clearly any important changes of morphology and crystallographic preferred orientation. SLG/Mo/CIGS/Buffer layer/i-ZnO/ZnO:Al/grid(Ni/Al/Ni)solar cells with either a chemical bath deposited CdS or an atomic layer deposited Zn(O,S) buffer layer were fabricated. For both buffer layers, the bi-CUPRO processes lead to higher efficiencies. Besides, using Zn(O,S), the electronic collection was improved for the infrared spectrum as well as for the ultraviolet spectrum. This resulted in efficiencies close to 14,5 % for the Zn(O,S) cells.
Place, publisher, year, edition, pages
Warrendale, PA: Material Research Society , 2009. , 6 p.
, Materials Research Society symposium proceedings, ISSN 0272-9172 ; 1165
Solar Cell, Cu(In, Ga)Se2, buffer layer
Condensed Matter Physics Engineering and Technology
Research subject Engineering Science with specialization in Solid State Physics
IdentifiersURN: urn:nbn:se:uu:diva-120587DOI: 10.1557/PROC-1165-M02-05OAI: oai:DiVA.org:uu-120587DiVA: diva2:303648
2009 MRS Spring Meeting, April 13 - 17, 2009, San Francisco, CA