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Increase of the Deposition Rate in Reactive Sputtering of Metal Oxides using a Ceramic Nitride Target
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2009 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 105, no 9, 093302- p.Article in journal (Refereed) Published
Abstract [en]

We present a method to eliminate hysteresis effects and to increase the deposition rate for the reactive sputtering of metal oxides. This is achieved by using a ceramic nitride target in an argon-oxygen atmosphere. Although the use of a ceramic nitride target leads to   pronounced changes of the processing characteristics, incorporation of nitrogen into the growing film is very small. These observations can be theoretically predicted using an extension of Berg's model [S. Berg and   T. Nyberg, Thin Solid Films 476, 215 (2005)] to two different reactive gases and a compound target.

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2009. Vol. 105, no 9, 093302- p.
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Physical Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-121219DOI: 10.1063/1.3124380ISI: 000266263300022OAI: oai:DiVA.org:uu-121219DiVA: diva2:304697
Available from: 2010-03-19 Created: 2010-03-19 Last updated: 2017-12-12Bibliographically approved

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Kappertz, OliverNyberg, TomasBerg, Sören

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