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Significant configurational dependence of the electromechanical coupling constant of B0.125Al 0.875 N
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 15, 151911- p.Article in journal (Refereed) Published
Abstract [en]

Currently, AlN is the preferred material in electroacoustic applications but modern applications necessitate the synthesis of materials with a range of electroacoustic properties. Among the promising candidates are the wurtzite Boron-containing AlN alloys. In  here we study theoretically some of the material properties of wurtzite B0.125Al0.875N. The results indicate that wurtzite B0.125Al0.875N exhibits a strong configurational dependence of the electromechanical coupling constant. It is further shown that the lattice parameters as well as the stiffness constants are less sensitive of the atomic configuration and comply well with the Vegard's rule.

Place, publisher, year, edition, pages
2009. Vol. 94, no 15, 151911- p.
Keyword [en]
acoustoelectric effects, aluminium compounds, boron compounds, elastic constants, III-V semiconductors, lattice constants, permittivity, piezoelectricity, wide band gap semiconductors
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-121220DOI: 10.1063/1.3119644ISI: 000265285200028OAI: oai:DiVA.org:uu-121220DiVA: diva2:304702
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WISENETSSF-EXC
Available from: 2010-03-19 Created: 2010-03-19 Last updated: 2017-12-12Bibliographically approved

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Katardjiev, Ilia

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