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2D Device modelling and finite element simulations for thin-film solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2009 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 93, no 6-7, 1066-1069 p.Article in journal (Refereed) Published
Abstract [en]

Thin-film heterojunction solar cell devices are modelled in two dimensions, from fundamental material parameters, using the finite element method. The electrostatic potential is solved for, together with the quasi-Fermi levels, while optical absorption is calculated from n and k values of the materials used.In this implementation, all material parameters can be input as functions of spatial coordinates, which makes it very flexible when applied to materials with inhomogeneities. As an example of the model model in use, it is applied to a thin-film solar cell based on a structure with a CIGS absorber layer, a CdS buffer layer and a ZnO/ZAO transparent front contact. The effects of spatial inhomogeneities in the band gap energy and in the mid-gap trap level density on device performance are simulated.

Place, publisher, year, edition, pages
2009. Vol. 93, no 6-7, 1066-1069 p.
Keyword [en]
Solar cells, Numerical simulations, Finite element method
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-121222DOI: 10.1016/j.solmat.2008.11.058ISI: 000266641100089OAI: oai:DiVA.org:uu-121222DiVA: diva2:304705
Available from: 2010-03-19 Created: 2010-03-19 Last updated: 2017-12-12Bibliographically approved

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Edoff, Marika

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