Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si
2009 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 159-160, 177-181 p.Article in journal (Refereed) Published
Samples of epitaxially grown n-type Si have been implanted with low doses (< 1 x 10(9) cm(-1)) of He, C, Si, and I ions using energies from 2.75 to 48 MeV. Deep level transient spectroscopy (DLTS) analysis of the implanted samples reveals a stronger signal for the signature of the singly negative charge state of the divacancy (V-2(-/0)) as compared to that of the doubly negative charge state of the divacancy (V-2(=/-)). Isochronal annealing for 20 min ranging from 150 to 400 degrees C results in a gradual decrease ill the DLTS peak amplitude of the V-2(-/0) signature, accompanied by an increase in the peak amplitudes of both the vacancy oxygen pair (VO) and the V-2(=/-) levels, as well as an increase in the carrier Capture rates for the levels. A model based on local compensation of charge carriers front individual ion tracks is proposed in order to explain the results, involving two fractions of V-2: (1) V-2 centers localized in regions with high defect density around the ion track (V-2(dense)) and (2) V-2 centers located in regions with a low defect density (V-2(dilute)).
Place, publisher, year, edition, pages
2009. Vol. 159-160, 177-181 p.
Silicon, Elemental semiconductors, Deep levels, Ion implantation, Deep level transient spectroscopy, Carrier density
Subatomic Physics Engineering and Technology
Research subject Ion Physics
IdentifiersURN: urn:nbn:se:uu:diva-122075DOI: 10.1016/j.mseb.2008.11.031ISI: 000267635500044OAI: oai:DiVA.org:uu-122075DiVA: diva2:308389