uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Effect spatial defect distribution on the electrical behavior of prominent vacancy points defects in swift-ion implanted Si
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Show others and affiliations
2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 79, no 7, 075206- p.Article in journal (Refereed) Published
Abstract [en]

Samples of epitaxially grown n-type silicon have been implanted at room   temperature with low doses (10(6)-10(9) cm(-2)) of He, C, Si, and I   ions using energies from 2.75 to 46 MeV. Deep level transient   spectroscopy studies reveal that the generation of divacancy (V-2) and   vacancy-oxygen (VO) pairs has a distinct ion mass dependence.   Especially, the doubly negative charge state of the divacancy,   V-2(=/-), decreases in intensity with increasing ion mass compared to   that of the singly negative charge state of the divacancy, V-2(-/0). In   addition, the measurements show also a decrease in the intensity of the   level assigned to VO compared to that of V-2(-/0) with increasing ion   mass. Carrier capture cross-section measurements demonstrate a   reduction in the electron capture rate with increasing ion mass for all   the three levels V-2(-/0), V-2(=/-), and VO; but a gradual recovery   occurs with annealing. Concurrently, the strength of the V-2(-/0) level   decreases in a wide temperature range starting from below 200 degrees   C, accompanied by an increase in the amplitudes of both the VO and   V-2(=/-) peaks. In order to account for these results a model is   introduced where local carrier compensation is a key feature and where   two modes of V-2 are considered: (1) V-2 centers located in regions   with a high defect density around the ion track (V-2(dense)) and (2)   V-2 centers located in regions with a low defect density (V-2(dilute)).   The V-2(dense) fraction does not give any contribution to the V-2(=/-)   signal due to local carrier compensation, and the amplitude of the   V-2(=/-) level is determined by the V-2(dilute) fraction only. The   spatial distributions of defects generated by single-ion impacts were   simulated by Monte Carlo calculations in the binary collision   approximation, and to distinguish between the regions with V-2(dense)   and V-2(dilute) a threshold for the defect generation rate was   introduced. The model is shown to give good quantitative agreement with   the experimentally observed ion mass dependence for the ratio between   the amplitudes of the V-2(=/-) and V-2(-/0) peaks. In particular, the   threshold value for the defect generation rate remains constant   (similar to 1.2 vacancies/ion/A) irrespective of the type of ion used,   which provides strong evidence for the validity of the model. Annealing   at temperatures above similar to 300 degrees C is found to reduce the   spatial localization of the defects and migration of V-2 occurs with   subsequent trapping by interstitial oxygen atoms and formation of   divacancy-oxygen pairs.

Place, publisher, year, edition, pages
2009. Vol. 79, no 7, 075206- p.
Keyword [en]
annealing, carbon, charge compensation, deep level transient spectroscopy, electron capture, elemental semiconductors, helium, hole traps, interstitials, iodine, ion implantation, Monte Carlo methods, silicon, vacancies (crystal)
National Category
Subatomic Physics Engineering and Technology
Research subject
Ion Physics
URN: urn:nbn:se:uu:diva-122082DOI: 10.1103/PhysRevB.79.075206ISI: 000263815800055OAI: oai:DiVA.org:uu-122082DiVA: diva2:308406
Available from: 2010-04-06 Created: 2010-04-06 Last updated: 2016-04-14Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Jensen, J
By organisation
Ion Physics
In the same journal
Physical Review B. Condensed Matter and Materials Physics
Subatomic PhysicsEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 132 hits
ReferencesLink to record
Permanent link

Direct link