Negative differential electron mobility and single valley transport in diamond
(English)Manuscript (preprint) (Other academic)
Electron transport in isolated conduction band valleys across macroscopic distances has been observed in single-crystalline CVD diamond at 70 K by use of the time-of-flight technique. This is possible due to the very low scattering cross section for intervalley scattering in single-crystalline CVD diamond. This effect enables a precise determination of the ratio between longitudinal and transverse conduction band effective masses in diamond. We find ml/mt = 5.2. At temperatures in the interval 110-140 K, a negative differential mobility (NDM) has been observed for electrons with the electric field parallel to the crystallographic <100> direction. The NDM can be explained in terms of valley repopulation effects between the equivalent energy conduction band minima.
ToF, time of flight, negative differential mobility, drift velocity, CVD diamond, single crystal diamond
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-122793OAI: oai:DiVA.org:uu-122793DiVA: diva2:311067