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Micromachined Thin Film Plate Acoustic Resonators Utilizing the Lowest Order Symmetric Lamb Wave Mode
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin films)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films)
2007 (English)In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 54, no 1, 87-95 p.Article in journal (Refereed) Published
Abstract [en]

Thin film integrated circuits compatible resonant structures using the lowest order symmetric Lamb wave propagating in thin aluminum nitride (AlN) filmmembranes have been studied. The 2-μm thick, highly coriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rockingcurve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-μm wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateralfield excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technologyproved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology.

Place, publisher, year, edition, pages
2007. Vol. 54, no 1, 87-95 p.
Keyword [en]
Microwave
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-87310DOI: 10.1109/TUFFC.2007.214ISI: 000243042700009PubMedID: 17225803OAI: oai:DiVA.org:uu-87310DiVA: diva2:31701
Projects
SSF - ICTEAWISENET
Available from: 2008-11-17 Created: 2008-10-02 Last updated: 2017-12-12Bibliographically approved

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Yantchev, VentsislavKatardjiev, Ilia

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