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Enhanced drift in RF-power LDMOS transistors under pulsed stress conditions
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Ferdinand-Braun-Institut, Leibniz-Institut fur Höchstfrequenztechnik.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2010 (English)In: Proc. of German Microwave Conference 2010, 2010 Mar 15-17, Berlin, Germany: GeMiC2010, 2010, 182-185 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents an experimental evaluation of the reliability of LDMOS transistors with possible use in radio base station PA or for pulsed S-band Radar applications. Alternative device layouts have been investigated in a stress-test measurement system capable of generating pulses in the nanosecond range. The investigation shows that pulsed operation accelerate device drift. For the most sensitive parameter RON, pulsed operation at low supply voltage increase the drift with a factor 3 compared to constant operation. The investigation indicates that the stress is affecting the overlap or the field region but not the channel region. RESURF designed devices with decreased field in this region therefore show less RON drift.

Place, publisher, year, edition, pages
2010. 182-185 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-125215OAI: oai:DiVA.org:uu-125215DiVA: diva2:318820
Conference
German Microwave Conference 2010
Available from: 2010-05-11 Created: 2010-05-11 Last updated: 2016-04-19Bibliographically approved

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Vestling, LarsBengtsson, OlofOlsson, Jörgen

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