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Modelling of low energy ion sputtering from oxide surfaces
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2010 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 43, no 20, 205204- p.Article in journal (Refereed) Published
Abstract [en]

The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

Place, publisher, year, edition, pages
2010. Vol. 43, no 20, 205204- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-126508DOI: 10.1088/0022-3727/43/20/205204ISI: 000277373400012OAI: oai:DiVA.org:uu-126508DiVA: diva2:324552
Available from: 2010-06-15 Created: 2010-06-15 Last updated: 2017-12-12Bibliographically approved

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Kubart, TomasNyberg, TomasBerg, Sören

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