Modelling of sputtering yield amplification effect in reactive deposition of oxides
2010 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 204, no 23, 3882-3886 p.Article in journal (Refereed) Published
Many reactive sputter deposition applications require high deposition rates. The primary limiting parameters in magnetron sputtering are the target power dissipation and sputtering yields of the target elements. In reactive deposition of oxides, the deposition rate is of particular interest due to the low sputtering yield of most commonly used oxides. Traditional high rate techniques rely on a feedback control of the oxygen partial pressure to prevent formation of oxide on the target and hence enable operation in the transition area. An alternative approach, based on target doping, is presented in this paper.By doping the sputtering target with heavy elements, it is possible to substantially enhance the sputtering yield and hence the deposition rate. Simulations of the partial sputtering yield values for aluminium from doped targets sputtered in reactive atmosphere have been carried out. The Monte Carlo based TRIDYN computer code has been used for simulations. The program has been used to find out optimum alloying conditions to obtain maximum partial sputtering yield for deposition of Al2O3. Our simulations indicate that the sputtering yield amplification in reactive sputtering may lead to much higher relative deposition rate increase than in a nonreactive case. The highest relative increase may be achieved in the transition region but substantial increase is predicted also in the oxide mode.
Place, publisher, year, edition, pages
2010. Vol. 204, no 23, 3882-3886 p.
Reactive sputtering, Magnetron sputtering, Oxides, Deposition rate, TRIDYN
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-126768DOI: 10.1016/j.surfcoat.2010.05.006ISI: 000280048600019OAI: oai:DiVA.org:uu-126768DiVA: diva2:326772