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Understanding defect-related issues limiting efficiency of CIGS solar cells
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2009 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 93, no 8, 1290-1295 p.Article in journal (Refereed) Published
Abstract [en]

Many electrical characteristics of Cu(In,Ga)Se-2-based solar cells, including current-voltage characteristics, are affected by specific properties of negative-U defects in the absorber. We present these characteristics and discuss them in the framework of a V-Se-V-Cu defect model proposed by Lany and Zunger. We show how these defects influence photocarrier transport and the dominant recombination mechanism, and hence also the photovoltaic parameters of the cells. Numerical simulations validating our approach will also be presented. (C) 2009 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2009. Vol. 93, no 8, 1290-1295 p.
Keyword [en]
CIGS, Defects, Capacitance, Device modelling
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-128389DOI: 10.1016/j.solmat.2009.01.022ISI: 000267573800017OAI: oai:DiVA.org:uu-128389DiVA: diva2:331515
Available from: 2010-07-23 Created: 2010-07-20 Last updated: 2016-04-14Bibliographically approved

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Edoff, Marika
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Solid State Electronics
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