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Non-transition-metal doped diluted magnetic semiconductors
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 10, 102504- p.Article in journal (Refereed) Published
Abstract [en]

Based on first-principles calculations, we have investigated the magnetic properties of non-transition-metal doped semiconductors Al(N,X) and Zn(O,X), where X is a first row atom. It is revealed that the dopant can remain magnetic only if it is less electronegative than the substituted host anion atom and the dopant 2p states are located within the energy gap of the host. The calculated magnetic moment per dopant in mu(B) is the atomic number difference between the dopant and the host anion atom. The global magnetic order is determined by the hole number, the interaction between the 2p dopant states and their exchange splitting. It is found that the Curie temperature is highest when the atomic number of the dopant is smaller than that of the anion by two.

Place, publisher, year, edition, pages
2009. Vol. 94, no 10, 102504- p.
Keyword [en]
ab initio calculations, aluminium compounds, Curie temperature, energy gap, III-V semiconductors, II-VI semiconductors, magnetic moments, semiconductor doping, semimagnetic semiconductors, wide band gap semiconductors, zinc compounds
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-129860DOI: 10.1063/1.3095601ISI: 000264280000055OAI: oai:DiVA.org:uu-129860DiVA: diva2:345523
Available from: 2010-08-25 Created: 2010-08-25 Last updated: 2017-12-12Bibliographically approved

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Ahuja, Rajeev

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