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Defect energetics and Xe diffusion in UO2 and ThO2
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Materials Science.
2009 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 57, no 5, 1655-1659 p.Article in journal (Refereed) Published
Abstract [en]

We have performed ab initio total energy calculations to investigate the defect energetics and diffusion behavior of Xe in UO2 and ThO2 matrices. All calculations have been carried out Using density functional theory within the generalized gradient approximation and applying the projector-augmented-wave method. Our results Show that the formation and migration energies of vacancy defects are more than twice as high in ThO2 compared with UO2. Another notable difference between the two oxides is the role played by an oxygen vacancy ill the movement of a cation vacancy. An vacancy enhances the movement Of a uranium vacancy by lowering its migration energy by about 1 eV, but a similar effect is not observed in ThO2. The different behavior of cation vacancies in the two oxides strongly affects the mobility of fission gases and leads to differences in their respective diffusion behavior. We sui, est that the strong resistance against oxidation of ThO2 prevents the creation and migration of defects. and results ill a lower mobility of fission gases ill ThO2 as compared to UO2.

Place, publisher, year, edition, pages
2009. Vol. 57, no 5, 1655-1659 p.
Keyword [en]
Formation energy, Migration energy, Resistance against oxidation, Fission gas release, Vacancy-assisted mechanism
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-129870DOI: 10.1016/j.actamat.2008.12.010ISI: 000264454900037OAI: oai:DiVA.org:uu-129870DiVA: diva2:345538
Available from: 2010-08-25 Created: 2010-08-25 Last updated: 2012-03-26Bibliographically approved

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