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A novel self-refreshable capacitorless DRAM cell and its extended applications
Dept. of Microelectronics, Fudan University, Shanghai, China.
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2010 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, no 9, 985-990 p.Article in journal (Refereed) Published
Abstract [en]

A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.

Place, publisher, year, edition, pages
2010. Vol. 54, no 9, 985-990 p.
Keyword [en]
Capacitorless DRAM, Image sensor, MOSFET, Tunneling FET
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-130773DOI: 10.1016/j.sse.2010.04.012ISI: 000280322300026OAI: oai:DiVA.org:uu-130773DiVA: diva2:351084

Selected Papers from the ESSDERC 2009 Conference

Available from: 2010-09-13 Created: 2010-09-13 Last updated: 2016-04-19Bibliographically approved

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