A novel self-refreshable capacitorless DRAM cell and its extended applications
2010 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, no 9, 985-990 p.Article in journal (Refereed) Published
A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.
Place, publisher, year, edition, pages
2010. Vol. 54, no 9, 985-990 p.
Capacitorless DRAM, Image sensor, MOSFET, Tunneling FET
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-130773DOI: 10.1016/j.sse.2010.04.012ISI: 000280322300026OAI: oai:DiVA.org:uu-130773DiVA: diva2:351084
Selected Papers from the ESSDERC 2009 Conference2010-09-132010-09-132016-04-19Bibliographically approved