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A novel self-refreshable capacitorless DRAM cell and its extended applications
Dept. of Microelectronics, Fudan University, Shanghai, China.
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2010 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, no 9, p. 985-990Article in journal (Refereed) Published
Abstract [en]

A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.

Place, publisher, year, edition, pages
2010. Vol. 54, no 9, p. 985-990
Keyword [en]
Capacitorless DRAM, Image sensor, MOSFET, Tunneling FET
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-130773DOI: 10.1016/j.sse.2010.04.012ISI: 000280322300026OAI: oai:DiVA.org:uu-130773DiVA, id: diva2:351084
Note

Selected Papers from the ESSDERC 2009 Conference

Available from: 2010-09-13 Created: 2010-09-13 Last updated: 2017-12-12Bibliographically approved

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Zhang, Shi-Li

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