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Charge-Injection-Induced Time Decay in Carbon Nanotube Network-Based FETs
State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China.
State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 31, no 10, 1098-1100 p.Article in journal (Refereed) Published
Abstract [en]

A voltage-pulse method is utilized to investigate the charge-injection-induced time decay of the source #x02013;drain current of field-effect transistors with randomly networked single-walled carbon nanotubes (CNTs) as the conduction channel. The relaxation of trapped carriers in the CNT networks can be accounted for by assuming two exponential decays occurring simultaneously. The slow decay is characterized by a time constant comparable to literature data obtained for a carrier recombination in the semiconducting CNTs. The faster decay with a time constant that has a smaller order of magnitude is attributed to the annihilation of trapped carriers in metallic CNTs or at metal-CNT contacts. Both time constants are gate-bias dependent.

Place, publisher, year, edition, pages
2010. Vol. 31, no 10, 1098-1100 p.
Keyword [en]
Carbon nanotube network, charge injection, field-effect transistor, hysteresis, relaxation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-130778DOI: 10.1109/LED.2010.2061833ISI: 000283353900010OAI: oai:DiVA.org:uu-130778DiVA: diva2:351092
Available from: 2010-09-13 Created: 2010-09-13 Last updated: 2017-12-12Bibliographically approved

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Zhang, Z.-B.Zhang, Shi-Li

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