Electrical and Thermal Characterization of 150 mm Silicon–on–polycrystalline-Silicon Carbide Hybrid Substrates
2010 (English)In: 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA, 2010, 115-116 p.Conference paper (Refereed)
150 mm Silicon–on–polycrystalline-Silicon Carbide (poly-SiC) hybrid substrates, without intermediate oxide layers have been realized by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step has been introduced before furnace annealing to avoid bubble formation, cracks and breakage. The final substrates are shown to be stress free. Electrical and thermal characterization of devices manufactured on the substrate using a MOS process show excellent performance.
Place, publisher, year, edition, pages
2010. 115-116 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-133056ISBN: 978-1-4244-9128-5OAI: oai:DiVA.org:uu-133056DiVA: diva2:360097
2010 IEEE International SOI Conference