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Electrical and Thermal Characterization of 150 mm Silicon–on–polycrystalline-Silicon Carbide Hybrid Substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: 2010 IEEE International SOI Conference Proceedings, Oct 11-14, San Diego CA, 2010, 115-116 p.Conference paper, Published paper (Refereed)
Abstract [en]

150 mm Silicon–on–polycrystalline-Silicon Carbide (poly-SiC) hybrid substrates, without intermediate oxide layers have been realized by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step has been introduced before furnace annealing to avoid bubble formation, cracks and breakage. The final substrates are shown to be stress free. Electrical and thermal characterization of devices manufactured on the substrate using a MOS process show excellent performance.

Place, publisher, year, edition, pages
2010. 115-116 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-133056ISBN: 978-1-4244-9128-5 (print)OAI: oai:DiVA.org:uu-133056DiVA: diva2:360097
Conference
2010 IEEE International SOI Conference
Available from: 2010-11-02 Created: 2010-11-02 Last updated: 2016-04-19Bibliographically approved

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Lotfi, SaraVallin, ÖrjanLi, Ling-GuangVestling, LarsNorström, HansOlsson, Jörgen

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