Evaluation of Zn-Sn-O buffer layers for CuIn0.5Ga0.5Se2 solar cells
2011 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 19, no 4, 478-481 p.Article in journal (Refereed) Published
Thin Zn-Sn-O films are evaluated as new buffer layer material for Cu(In,Ga)Se-2-based solar cell devices. A maximum conversion efficiency of 13.8% (V-oc = 691 mV, J(sc)(QE) = 27.9 mA/cm(2), and FF = 71.6%) is reached for a solar cell using the Zn-Sn-O buffer layer which is comparable to the efficiency of 13.5% (V-oc - 706 mV, J(sc)(QE) - 26.3 mA/cm(2), and FF = 72.9%) for a cell using the standard reference CdS buffer layer. The open circuit voltage (V-oc) and the fill factor (FF) are found to increase with increasing tin content until an optimum in both parameters is reached for Sn/(Zn+Sn) values around 0.3-0.4.
Place, publisher, year, edition, pages
2011. Vol. 19, no 4, 478-481 p.
Zn-Sn-O, Cu(In, Ga)Se2, buffer layer, atomic layer deposition
Condensed Matter Physics Engineering and Technology
Research subject Engineering Science with specialization in Solid State Physics; Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-133098DOI: 10.1002/pip.1039ISI: 000290481100011OAI: oai:DiVA.org:uu-133098DiVA: diva2:360098