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Improved fill factor and open circuit voltage by crystalline selenium at the Cu(In,Ga)Se-2/buffer layer interface in thin film solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 18, no 4, 249-256 p.Article in journal (Refereed) Published
Abstract [en]

A surface treatment by evaporated selenium on Cu(In,Ga)Se, (CIGS) is shown to improve open circuit voltage, V and in some cases fill factor, FF, in solar cells with CdS, (Zn,Mg)O or Zn(O,S) buffer layers. V increases with increasing amount of crystalline Se, while FF improves only for small amounts. The improvements are counteracted by a decreasing short circuit current assigned to absorption in hexagonal Se. Improved efficiency is shown for device structures with (Zn,Mg)0 and Zn(O,S) buffer layers by atomic layer deposition. Analysis by grazing incidence X-ray diffraction and photoelectron spectroscopy show partial coverage of the CIGS surface by hexagonal selenium. The effects on device performance from replacing part of the CIGS/buffer interface area by a Se/buffer junction are discussed.

Place, publisher, year, edition, pages
2010. Vol. 18, no 4, 249-256 p.
Keyword [en]
CIGS, thin film solar cells, interface, buffer layer, selenium
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-133171DOI: 10.1002/pip.957ISI: 000277905100003OAI: oai:DiVA.org:uu-133171DiVA: diva2:360290
Available from: 2010-11-02 Created: 2010-11-02 Last updated: 2016-04-19Bibliographically approved

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Platzer-Björkman, CharlottePettersson, JonasTörndahl, TobiasEdoff, Marika

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