Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)(2) based thin film photovoltaics: Present status and current developments
2010 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 18, no 6, 411-433 p.Article in journal (Refereed) Published
The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO.
Place, publisher, year, edition, pages
2010. Vol. 18, no 6, 411-433 p.
Cd-free buffer layers, window layers, transparent conducting oxides, chalcopyrite-based solar cells, Cu(In, Ga)(S, Se)(2)
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-133172DOI: 10.1002/pip.955ISI: 000282150100003OAI: oai:DiVA.org:uu-133172DiVA: diva2:360291