uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Band gap engineering of ZnO for high efficiency CIGS based solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2010 (English)In: Oxide-based Materials and Devices / [ed] Teherani FH, Look DC, Litton CW, Rogers DJ, 2010, Vol. 7603, 76030-76039 p.Conference paper, Published paper (Refereed)
Abstract [en]

Thin film solar cells based on Cu(In,Ga)Se2, called CIGS, is one of the most promising technologies for low cost, high efficiency photovoltaics. The CIGS device is composed of four layers; molybdenum back contact, CIGS p-type absorber, n-type buffer layer and doped ZnO top contact. The most common buffer layer is CdS, however it is desirable to find a Cd-free, large band gap alternative. In this paper, the use of ZnO-based buffer layers deposited by atomic layer deposition, ALD is described. Efficiencies of over 18% are shown by using Zn(O,S) or (Zn,Mg)O by ALD followed by sputtered ZnO:Al. The role of the conduction band alignment across the heterojunction is discussed, and results for large band gap CuGaSe2 absorbers are presented. In addition, light-soaking effects for devices with (Zn,Mg)O-based buffer layers are related to measurements of persistent photoconductivity of ALD-(Zn,Mg)O thin films.

Place, publisher, year, edition, pages
2010. Vol. 7603, 76030-76039 p.
Series
Proceedings of SPIE-The International Society for Optical Engineering, ISSN 0277-786X ; 7603
Keyword [en]
Cu(In, Ga)Se-2, solar cells, thin film, ZnO, band alignment
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-133173DOI: 10.1117/12.846017ISI: 000284035700008ISBN: 978-0-8194-7999-0 (print)OAI: oai:DiVA.org:uu-133173DiVA: diva2:360294
Conference
Conference on Oxide-based Materials and Devices San Francisco, CA, JAN 24-27, 2010
Note

band gap;high efficiency CIGS based solar cells;thin film solar cells;high efficiency photovoltaics;p-type absorber;n-type buffer layer;atomic layer deposition;conduction band alignment;heterojunction;light-soaking effects;photoconductivity;ZnO-CdS-Cu(InGa)Se2-Mo;

Available from: 2010-11-02 Created: 2010-11-02 Last updated: 2016-04-18Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Platzer-Björkman, CharlotteHultqvist, AdamPettersson, JonasTörndahl, Tobias

Search in DiVA

By author/editor
Platzer-Björkman, CharlotteHultqvist, AdamPettersson, JonasTörndahl, Tobias
By organisation
Solid State Electronics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 825 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf