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Simulation of hydrogenated graphene field-effect transistors through a multiscale approach
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2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 82, no 15, 153404- p.Article in journal (Refereed) Published
Abstract [en]

In this work, we present a performance analysis of field-effect transistors (FETs) based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semihydrogenated graphene (i.e., graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor sp(3) tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large I-on and I-on/I-off ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.

Place, publisher, year, edition, pages
2010. Vol. 82, no 15, 153404- p.
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Physical Sciences
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URN: urn:nbn:se:uu:diva-133851DOI: 10.1103/PhysRevB.82.153404ISI: 000282635500002OAI: oai:DiVA.org:uu-133851DiVA: diva2:370519
Available from: 2010-11-17 Created: 2010-11-16 Last updated: 2012-03-26Bibliographically approved

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Klintenberg, MattiasEriksson, Olle

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