Measurements of photo-induced changes in the conduction properties of ALD-Zn1−xMgxO thin films
2010 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T141, 014010-1-014010-4 p.Article in journal (Refereed) Published
Resistivity and Hall measurements are conducted on atomic layer deposited Zn1−xMgxO thin films of different thicknesses and compositions. It is found that the films exhibit persistent photoconductivity after UV-light exposure. The effect is more pronounced for thinner films with higher magnesium content. These are also the films with the highest resistivity. Light-induced excess conductivity is still present in some of the films after weeks of dark storage. Conductivity relaxation is faster at higher temperatures. From Hall measurements, it is observed that conductivity changes are a combined effect of changes in the mobility and concentration of free carriers.
Place, publisher, year, edition, pages
2010. Vol. T141, 014010-1-014010-4 p.
solar cells, ZnMgO, thin films, ALD, Hall measurements, persistent photoconductivity
Physical Sciences Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-134626DOI: 10.1088/0031-8949/2010/T141/014010ISI: 000284694500011OAI: oai:DiVA.org:uu-134626DiVA: diva2:373115