On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)
2010 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 13, no 10, H360-H362 p.Article in journal (Refereed) Published
Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.
Place, publisher, year, edition, pages
2010. Vol. 13, no 10, H360-H362 p.
annealing, electrical resistivity, epitaxial layers, nickel compounds, platinum compounds, sputter deposition
Physical Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-134982DOI: 10.1149/1.3473723ISI: 000280769700016OAI: oai:DiVA.org:uu-134982DiVA: diva2:374983