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On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 13, no 10, H360-H362 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.

Place, publisher, year, edition, pages
2010. Vol. 13, no 10, H360-H362 p.
Keyword [en]
annealing, electrical resistivity, epitaxial layers, nickel compounds, platinum compounds, sputter deposition
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-134982DOI: 10.1149/1.3473723ISI: 000280769700016OAI: oai:DiVA.org:uu-134982DiVA: diva2:374983
Available from: 2010-12-07 Created: 2010-12-03 Last updated: 2017-12-11Bibliographically approved

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Luo, JunZhang, Shi-Li

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